| PART |
Description |
Maker |
| APT10SCD120BCT |
SiC Schottky Diodes
|
Microsemi
|
| MSICSN05120CA MSICSN05120CAE3 MSICSN05120CC MSICSN |
SiC Schottky Diodes
|
Microsemi
|
| LSIC2SD120C05 |
This series of silicon carbide (SiC) Schottky diodes has negligible reverse recovery current
|
Littelfuse
|
| IDW20G65C512 |
ThinQ! Generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes.
|
Infineon Technologies AG
|
| IDW10G65C512 |
ThinQ! Generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes.
|
Infineon Technologies AG
|
| IDH10G65C512 |
ThinQ! Generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes.
|
Infineon Technologies AG
|
| IDH05G65C512 |
ThinQ! Generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes.
|
Infineon Technologies AG
|
| BAT15-02L BAT15-02V BAT15-04W BAT15-05W BAT15 BAT1 |
Schottky Diodes - Silicon RF Schottky diode for DBS mixer applications up to 12 GHz
RESISTOR,SMD1206,1K,1/4W,5%
Silicon Schottky Diodes 硅肖特基二极
|
INFINEON[Infineon Technologies AG]
|
| 10-FZ06NBA110FP-M306L28 |
high speed IGBT with C6 MOSFET and SiC buck diodes
|
Vincotech
|
| SML10SIC03NC |
SiC SCHOTTKY DIODE
|
Seme LAB
|
| IDH08S120 |
thinQ SiC Schottky Diode
|
Infineon Technologies AG
|
| SCS215AJ |
SiC Schottky Barrier Diode
|
Rohm
|
